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FQB50N06L |
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| Part Number | FQB50N06L |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB50N06L / FQI50N06L 60 52.4 37.1 210 ± 20 (Note 2) (Note 1) (Note ... |
| Document |
 FQB50N06L Data Sheet
PDF 654.55KB |
Similar Datasheet
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| 2 | FQB55N06 |
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| 6 | FQB5N20 |
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Desde 2024. D4U Semiconductor.
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