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FQAF70N08 |
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| Part Number | FQAF70N08 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • 53.3A, 80V, RDS(on) = 0.017Ω @VGS = 10 V Low gate charge ( typical 75 nC) Low Crss ( typical 180 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF70N08 80 53.3 37.7 213.2 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A ... |
| Document |
 FQAF70N08 Data Sheet
PDF 662.69KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQAF70N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 2 | FQAF70N15 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 3 | FQAF7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 4 | FQAF7N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 5 | FQAF7N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 6 | FQAF10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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