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FQAF22P10 |
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| Part Number | FQAF22P10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • • -16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G D S TO-3PF FQAF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF22P10 -100 -16.6 -11.7 -66.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V... |
| Document |
 FQAF22P10 Data Sheet
PDF 629.05KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQAF28N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
|
| 2 | FQAF10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 3 | FQAF11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 4 | FQAF11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 5 | FQAF11N90C |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FQAF12N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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