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FQAF12N60 |
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| Part Number | FQAF12N60 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 7.8A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF12N60 600 7.8 4.9 31 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ Vns W W/°C °C °C Gate-Source Vol... |
| Document |
 FQAF12N60 Data Sheet
PDF 539.06KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQAF12P20 |
Fairchild Semiconductor |
200V P-Channel MOSFET |
|
| 2 | FQAF10N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 3 | FQAF11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 4 | FQAF11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 5 | FQAF11N90C |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FQAF13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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