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FQA7N90 |
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| Part Number | FQA7N90 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 7.4A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA7N90 900 7.4 4.7 29.6 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage... |
| Document |
 FQA7N90 Data Sheet
PDF 674.08KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA7N90M |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 2 | FQA7N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 3 | FQA7N65C |
Fairchild Semiconductor |
650V N-Channel MOSFET |
|
| 4 | FQA7N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 5 | FQA7N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 6 | FQA7N80C_F109 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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