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FQA65N20 |
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| Part Number | FQA65N20 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V Low gate charge ( typical 170 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA65N20 200 65 41 260 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Si... |
| Document |
 FQA65N20 Data Sheet
PDF 623.15KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA65N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 2 | FQA62N25C |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FQA6N70 |
Fairchild Semiconductor |
700V N-Channel MOSFET |
|
| 4 | FQA6N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 5 | FQA6N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 6 | FQA6N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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