FQA36P15 |
Part Number | FQA36P15 |
Manufacturer | Fairchild Semiconductor |
Description | These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • -36A, -150V, RDS(on) = 0.09Ω @VGS = -10 V Low gate charge ( typical 81 nC) Low Crss ( typical 110 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating S ! ● ● G! ▶ ▲ ● TO-3P G DS FQA Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA36P15 -150 -36 -25.5 -144 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A... |
Document |
FQA36P15 Data Sheet
PDF 658.68KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA30N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
2 | FQA32N20C |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FQA33N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
4 | FQA33N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET | |
5 | FQA34N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
6 | FQA34N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |