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M28F010 |
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| Part Number | M28F010 |
| Manufacturer | Intel Corporation |
| Description | Symbol A0 –A16 DQ0 –DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory ... |
| Features |
g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y
Y
Y Y
ETOX-III Flash-Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10 000 Program Erase Cycles Minimum Available in Three Product Grades QML b 55 C to a 125 C (TC) SE2 b 40 C to a 125 C (TC) SE3 b 40 C to a 110 C (TC)
Y
Intel’s M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is organized as 131 072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package The M28F010 is also ... |
| Document |
 M28F010 Data Sheet
PDF 317.31KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M28F008 |
Intel Corporation |
8 MBIT (1 MBIT x 8) FLASH MEMORY |
|
| 2 | M28F101 |
STMicroelectronics |
1 Mb FLASH MEMORY |
|
| 3 | M28F102 |
STMicroelectronics |
1 Mbit Flash Memory |
|
| 4 | M28F201 |
STMicroelectronics |
2 Mb FLASH MEMORY |
|
| 5 | M28F210 |
ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory |
|
| 6 | M28F211 |
ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory |
|
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