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EPA018BV |
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| Part Number | EPA018BV |
| Manufacturer | ETC |
| Description | Excelics DATA SHEET EPA018BV High Efficiency Heterojunction Power FET • • • • • • • • VERY HIGH fmax: 120GHz +20.0dBm TYPICAL OUTPUT POWER 13.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.75dB NOISE FI... |
| Features |
down Voltage Source Breakdown Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA Igd=0.5mA Igs=0.5mA -9 -7 MIN 18.0 13.0 TYP 20.0* 20.0* 14.5 13.0 48 0.75 12.5 30 35 55 60 -1.0 -15 -14 140
o
MAX
UNIT dBm dB % dB dB
80
mA mS
-2.5
V V V C/W
Thermal Resistance (Au-Sn Eutectic Attach)
* P1dB = 21.5dBm can be obtained with 8v/50% Idss bias. Consult factory for wafer selection.
MAXIMUM RATINGS AT 25OC
SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total P... |
| Document |
 EPA018BV Data Sheet
PDF 47.84KB |
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Desde 2024. D4U Semiconductor.
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