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F2013 |
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| Part Number | F2013 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2013
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 2.1 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
6.4 A
RF CHARACTERISTICS ... |
| Document |
 F2013 Data Sheet
PDF 38.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F2012 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 2 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 3 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 4 | F2003 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 5 | F2004 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 6 | F2021 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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