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F1209 |
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| Part Number | F1209 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1209
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 80 Watts Junction to Case Thermal Resistance 2.1 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V
o
-65 o C to 150o C
4 A
RF CHARACTERISTI... |
| Document |
 F1209 Data Sheet
PDF 36.79KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F1200A |
Diotec |
Fast Efficient Rectifier Diodes |
|
| 2 | F1200A |
Semikron |
High efficiency fast silicion rectifier diode |
|
| 3 | F1200A |
EIC |
FAST RECOVERY RECTIFIER DIODES |
|
| 4 | F1200B |
Diotec |
Fast Efficient Rectifier Diodes |
|
| 5 | F1200B |
Semikron |
High efficiency fast silicion rectifier diode |
|
| 6 | F1200D |
Diotec |
Fast Efficient Rectifier Diodes |
|
Desde 2024. D4U Semiconductor.
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