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F1120 |
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| Part Number | F1120 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
Total Device Dissipation 440 Watts Junction to Case Thermal Resistance 0.4 o C/W Maximum Junction Temperature 200 o C Storage Temperature
F1120
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
-65 o C to 150o C
20 A
RF CHARACTERISTICS ( 2... |
| Document |
 F1120 Data Sheet
PDF 44.68KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F1129 |
Renesas |
RF Amplifier |
|
| 2 | F1129LB |
Renesas |
RF Amplifier |
|
| 3 | F1129MB |
Renesas |
RF Amplifier |
|
| 4 | F1100 |
Integrated Device Technology |
RF to IF Dual Downconverting Mixer |
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| 5 | F1100C |
Champion |
5V FR-4 Surface Mount Crystal Clock Oscillators |
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| 6 | F1100E |
Fox Electronics |
5.0V TTL CLOCK OSCILLATOR |
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Desde 2024. D4U Semiconductor.
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