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F1001 |
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| Part Number | F1001 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
F1001
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance 3.13 o C/W Maximum Junction Temperature o 200 C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
o o -65 C to 150 C
2 A
RF CHARACTERISTI... |
| Document |
 F1001 Data Sheet
PDF 37.37KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F1000LC120 |
IXYS |
Extra Fast Recovery Diode |
|
| 2 | F100122 |
National Semiconductor |
9-BIT BUFFER |
|
| 3 | F100124 |
National Semiconductor |
Hex TTL-to-ECL Translator |
|
| 4 | F100125 |
National Semiconductor |
Hex ECL-to-TTL Translator |
|
| 5 | F100136 |
National Semiconductor |
4-Stage Counter / Shift Register |
|
| 6 | F100164 |
Fairchild Semiconductor |
16 Input Multiplexer |
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Desde 2024. D4U Semiconductor.
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