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FDS9435A |
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| Part Number | FDS9435A |
| Manufacturer | Fairchild Semiconductor |
| Description | SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
-5.3 A, -30 V, RDS(ON) = 0.045 Ω @ VGS = -10 V, RDS(ON) = 0.075 Ω @ VGS = - 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D D
D
S F D 5A 3 94
pin 1
5 6
S G
4 3 2 1
7 8
SO-8
S
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
FDS9435A Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
-3... |
| Document |
 FDS9435A Data Sheet
PDF 89.00KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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