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FDS8936S |
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| Part Number | FDS8936S |
| Manufacturer | Fairchild Semiconductor |
| Description | SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
Low gate charge. 5.0 A, 30 V. RDS(ON) = 0.040 Ω @ VGS = 10 V. High density cell design for extremely low R DS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
5 6 7 8
4 3 2 1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless other wise noted FDS8936S 30 ±20
(Note 1a)
Units V V A
5 20 2
Power Dissipation for Dual Operation Power Dissipation for Single O... |
| Document |
 FDS8936S Data Sheet
PDF 269.55KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDS8936A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 2 | FDS8934A |
Fairchild Semiconductor |
Dual P-Channel MOSFET |
|
| 3 | FDS8935 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDS8935 |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 5 | FDS89141 |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 6 | FDS89161 |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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