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FDS8934A |
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| Part Number | FDS8934A |
| Manufacturer | Fairchild Semiconductor |
| Description | SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to ... |
| Features |
-4 A , -20 V, RDS(ON) = 0.055 Ω @ VGS = -4.5 V, RDS(ON) = 0.072 Ω @ VGS = -2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
S FD 4A 3 89
G1 S2 G2
5 6 7 8
4 3 2 1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless otherwise noted FDS8934A -20 -8
(Note 1a)
Units V V A
-4 -... |
| Document |
 FDS8934A Data Sheet
PDF 417.45KB |
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Desde 2024. D4U Semiconductor.
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