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FDS6812A |
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| Part Number | FDS6812A |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain sup... |
| Features |
• 6.7 A, 20 V. RDS(ON) = 22 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V • Low gate charge (12 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units V V A W 6.7 35 2 Power Dissipation for Dual Operation Power Dissipation for Single Ope... |
| Document |
 FDS6812A Data Sheet
PDF 79.94KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDS6814 |
Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDS6815 |
Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDS6875 |
Fairchild Semiconductor |
Dual P-Channel MOSFET |
|
| 4 | FDS6875 |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 5 | FDS6890A |
Fairchild Semiconductor |
Dual N-Channel MOSFET |
|
| 6 | FDS6890A |
ON Semiconductor |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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