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FDS3570 Fairchild Semiconductor N-Channel MOSFET Datasheet

FDS3570 Small Signal Field-Effect Transistor, 9A, 80V, N-Channel MOSFET '


Fairchild Semiconductor
FDS3570
FDS3570
Part Number FDS3570
Manufacturer Fairchild Semiconductor
Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specific...
Features • • • • 9 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 7 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD S S S G 8 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 80 ±20 (Note 1a) Units V V A W 9 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage ...

Document Datasheet FDS3570 datasheet pdf (250.58KB)
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Rochester Electronics
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1000 units: 2.2 USD
500 units: 2.33 USD
100 units: 2.44 USD
25 units: 2.54 USD
1 units: 2.59 USD
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FDS3570
N채널 80V 9A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
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Fairchild Semiconductor Corporation
FDS3570
Small Signal Field-Effect Transistor, 9A, 80V, N-Channel MOSFET '
1000 units: 2.2 USD
500 units: 2.33 USD
100 units: 2.44 USD
25 units: 2.54 USD
1 units: 2.59 USD
Distributor
Rochester Electronics

78919 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDS3570
MOSFET Transistor, N-Channel, SO
234 units: 1.98 USD
82 units: 2.145 USD
1 units: 4.95 USD
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Quest Components

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Fairchild Semiconductor Corporation
FDS3570
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FDS3570 Similar Datasheet

Part Number Description
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D ...
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