FDN361AN |
Part Number | FDN361AN |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge... |
Features |
• 1.8 A, 30 V. RDS(on) = 0.100 Ω • • • @ VGS = 10 V RDS(on) = 0.150 Ω @ VGS = 4.5 V. Low gate charge ( 2.1nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(on). High power version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. Applications • DC/DC converter • Load switch • Motor drives • D D S SuperSOT -3 TM G TA=25 C unless otherwise noted o G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Parameter Gate-Source Voltage - Continuous Drain Current - C... |
Document |
FDN361AN Data Sheet
PDF 946.07KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDN361BN |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FDN360P |
Fairchild Semiconductor |
single P-Channel MOSFET | |
3 | FDN360P |
ON Semiconductor |
P-Channel MOSFET | |
4 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET | |
5 | FDN302P |
ON Semiconductor |
P-Channel MOSFET | |
6 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |