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FDN342P |
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| Part Number | FDN342P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide ... |
| Features |
-2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced power SuperSOTTM-3 (SOT-23).
Applications Load switch Battery protection Power management
D
D
S
SuperSOT -3
TM
G
TA = 25°C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
-20
(Note 1a)
Units
V V A W °C
±12 -2 -10 0.5 0.46 -55 to +150
Power Dissipation for Single Ope... |
| Document |
 FDN342P Data Sheet
PDF 307.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN342P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDN340P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDN340P |
Fairchild Semiconductor |
single P-Channel MOSFET |
|
| 4 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDN302P |
ON Semiconductor |
P-Channel MOSFET |
|
| 6 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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