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FDN338P |
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| Part Number | FDN338P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Loa... |
| Features |
• –1.6 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V RDS(ON) = 155 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint DD S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characterist... |
| Document |
 FDN338P Data Sheet
PDF 321.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN338 |
DCY |
FET |
|
| 2 | FDN338P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDN335N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FDN335N |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDN336P |
Fairchild Semiconductor |
single P-Channel MOSFET |
|
| 6 | FDN336P |
ON Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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