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FDN335N |
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| Part Number | FDN335N |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low... |
| Features |
• • • 1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V RDS(ON) = 0.100 Ω @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications • DC/DC converter • Load switch • D D S SuperSOT -3 TM G TA = 25°C unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 20 (Note 1a) Units V V A W °C ±8 1.7 8 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note... |
| Document |
 FDN335N Data Sheet
PDF 210.06KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN335N |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDN336P |
Fairchild Semiconductor |
single P-Channel MOSFET |
|
| 3 | FDN336P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDN337N |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDN337N |
ON Semiconductor |
N-Channel MOSFET |
|
| 6 | FDN338 |
DCY |
FET |
|
Desde 2024. D4U Semiconductor.
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