FDG6332C |
Part Number | FDG6332C |
Manufacturer | Fairchild Semiconductor |
Description | The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switchin... |
Features |
• Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 mΩ @ VGS = –4.5 V RDS(ON) = 630 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick) Applications • DC/DC converter • Load switch • LCD display inverter S G D D Pin 1 1 2 3 Complementary 6 5 4 G S SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unl... |
Document |
FDG6332C Data Sheet
PDF 93.07KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDG6332C |
ON Semiconductor |
Dual-Channel MOSFET | |
2 | FDG6331L |
Fairchild Semiconductor |
Integrated Load Switch | |
3 | FDG6335N |
Fairchild Semiconductor |
20V N&P-Channel MOSFET | |
4 | FDG6335N |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDG6301N |
Fairchild Semiconductor |
Dual N-Channel/ Digital FET | |
6 | FDG6301N |
ON Semiconductor |
Dual N-Channel Digital FET |