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FDG361N |
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| Part Number | FDG361N |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low ... |
| Features |
• 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V • Low gate charge (3.7nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Load switch • Battery protection • Power management S D D G Pin 1 1 2 D D 6 5 4 3 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 ±20 (Note 1a) Units V V A W °C 0.6 2.0 0.42 0.38 −55 to +150 Power Dissipation for Single Operation ... |
| Document |
 FDG361N Data Sheet
PDF 80.83KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG311N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDG312P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDG312P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDG313N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 5 | FDG313N |
ON Semiconductor |
N-Channel Digital FET |
|
| 6 | FDG314P |
Fairchild Semiconductor |
Digital FET/ P-Channel |
|
Desde 2024. D4U Semiconductor.
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