FDG316P |
Part Number | FDG316P |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior s... |
Features |
• -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V. • • • Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications • • • DC/DC converter Load switch Power Management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T J , T stg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted Parameter Ratings -30 (Note 1a) Units V V A W °C ± 20 -1.6 -6 0.75 0.48 -55... |
Document |
FDG316P Data Sheet
PDF 70.80KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDG316P |
ON Semiconductor |
P-Channel MOSFET | |
2 | FDG311N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET | |
3 | FDG312P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET | |
4 | FDG312P |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDG313N |
Fairchild Semiconductor |
N-Channel Digital FET | |
6 | FDG313N |
ON Semiconductor |
N-Channel Digital FET |