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FDD2670 |
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| Part Number | FDD2670 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature fas... |
| Features |
• 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1) Units V V A W 3.6 20 70 3.2 1.3 3.2 -55 to +150 Maximum Power Dissipation @ TC = 25°C @ TA = 25°C @ TA = 25°C (Note 1) (Note 1a) (Note 1b) (Note 3) dv/dt TJ, TSTG Peak D... |
| Document |
 FDD2670 Data Sheet
PDF 95.40KB |
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Desde 2024. D4U Semiconductor.
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