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FDC654P |
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| Part Number | FDC654P |
| Manufacturer | Fairchild Semiconductor |
| Description | These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
-3.6 A, -30 V. RDS(ON) = 0.075 Ω @ VGS = -10 V RDS(ON) = 0.125 Ω @ VGS = -4.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S D D
1
6
4 .65
G
pin 1
2
5
D D
SuperSOT
TM
-6
3
4
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed... |
| Document |
 FDC654P Data Sheet
PDF 74.61KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC654P |
ON Semiconductor |
P-Channel MOSFET |
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| 2 | FDC6506P |
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Dual P-Channel Logic Level PowerTrench MOSFET |
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| 3 | FDC6506P |
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| 4 | FDC653N |
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N-Channel MOSFET |
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| 5 | FDC653N |
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| 6 | FDC655AN |
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Single N-Channel/ Logic Level/ PowerTrenchTM MOSFET |
|
Desde 2024. D4U Semiconductor.
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