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FDC640P |
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| Part Number | FDC640P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide ... |
| Features |
• -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V • • • Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -2... |
| Document |
 FDC640P Data Sheet
PDF 261.02KB |
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Desde 2024. D4U Semiconductor.
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