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FDC6321C |
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| Part Number | FDC6321C |
| Manufacturer | Fairchild Semiconductor |
| Description | These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especia... |
| Features |
N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.0V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple dual NPN & PNP digital transistors.
SOT-23
SuperSOTTM-6 Mark:.321
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 S1 D1
4 3
G2
5
2
SuperSOT TM -6
S2 G1
6 1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless other wise noted
N-Channel P-Channel Units
VDSS, VCC VGSS, VIN ID, IO PD TJ,TSTG ESD
Drain-Source Voltag... |
| Document |
 FDC6321C Data Sheet
PDF 273.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6321C |
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Dual N & P-Channel Digital FET |
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| 2 | FDC6320C |
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| 3 | FDC6320C |
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| 4 | FDC6322C |
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| 6 | FDC6323L |
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