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FDC604P |
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| Part Number | FDC604P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch ... |
| Features |
• –5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V RDS(ON) = 60 mΩ @ VGS = –1.8 V • Fast switching speed. • High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to... |
| Document |
 FDC604P Data Sheet
PDF 112.10KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC604P |
ON Semiconductor |
P-Channel MOSFET |
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| 2 | FDC6000NZ |
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| 3 | FDC6020C |
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| 4 | FDC602P |
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| 6 | FDC606P |
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Desde 2024. D4U Semiconductor.
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