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FDC3601N |
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| Part Number | FDC3601N |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low ... |
| Features |
• 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V • Low gate charge (3.7nC typical) • Fast switching speed. • High performance trench technology for extremely low R DS(ON) . • SuperSOTTM-6 package: small footprint 72% (smaller than standard SO-8); low profile (1mm thick). D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 ±20 (Note 1a) Units V V A W 1.0 4.0 0.96 0.9 0.7 −55 to +150 Po... |
| Document |
 FDC3601N Data Sheet
PDF 91.96KB |
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Desde 2024. D4U Semiconductor.
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