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FDB603AL |
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| Part Number | FDB603AL |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
FDP603AL 30 ±20 33
(Note 1)
FDB603AL
Units V V... |
| Document |
 FDB603AL Data Sheet
PDF 414.54KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB6030 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDB6030BL |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDB6030BL |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDB6030L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDB6035AL |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDB6035L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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