FDB5690 |
Part Number | FDB5690 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature fas... |
Features |
• 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low RDS(ON). • 175°C maximum junction temperature rating. D D G G D S TO-220 FDP Series G S TC = 25°C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP5... |
Document |
FDB5690 Data Sheet
PDF 391.08KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDB5645 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
2 | FDB5680 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
3 | FDB5686 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
4 | FDB52N20 |
Fairchild Semiconductor |
MOSFET | |
5 | FDB5800 |
Fairchild Semiconductor |
N-Channel MOSFET | |
6 | FDB016N04AL7 |
Fairchild Semiconductor |
N-Channel MOSFET |