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FDB2670 |
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| Part Number | FDB2670 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and ... |
| Features |
• 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge (27 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1) (Note 1) Units V V A A W W°/C V/ns °C 19 40 93 0.63 3.2 –65 to +175 Total Power Dissipation @ TC = 25°C Derate a... |
| Document |
 FDB2670 Data Sheet
PDF 83.65KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB2670 |
Kexin |
N-Channel MOSFET |
|
| 2 | FDB2614 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDB20AN06A0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 4 | FDB24AN06LA0 |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
| 5 | FDB2532 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 6 | FDB2532 |
Kexin |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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