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FDB16AN08A0 |
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| Part Number | FDB16AN08A0 |
| Manufacturer | Fairchild Semiconductor |
| Description | FDB16AN08A0 — N-Channel PowerTrench® MOSFET November 2013 FDB16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 58 A • QG(t... |
| Features |
Applications
• RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 58 A • QG(tot) = 28 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82660 D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Con... |
| Document |
 FDB16AN08A0 Data Sheet
PDF 957.73KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB101 |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
| 2 | FDB101 |
LGE |
Silicon Bridge Rectifiers |
|
| 3 | FDB101S |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
| 4 | FDB101S |
LGE |
Silicon Bridge Rectifiers |
|
| 5 | FDB101S |
SeCoS |
1.0 Amp Silicon Bridge Rectifiers |
|
| 6 | FDB102 |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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