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FDB10AN06A0 |
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| Part Number | FDB10AN06A0 |
| Manufacturer | Fairchild Semiconductor |
| Description | FDB10AN06A0 / FDP10AN06A0 July 2002 FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench® MOSFET 60V, 75A, 10.5mΩ Features • r DS(ON) = 9.5mΩ (Typ.), V GS = 10V, ID = 75A • Qg(tot) = 28nC (Typ.), VGS = 1... |
| Features |
• r DS(ON) = 9.5mΩ (Typ.), V GS = 10V, ID = 75A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82560 Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems D DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE G TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25°C... |
| Document |
 FDB10AN06A0 Data Sheet
PDF 265.23KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB101 |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
| 2 | FDB101 |
LGE |
Silicon Bridge Rectifiers |
|
| 3 | FDB101S |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
| 4 | FDB101S |
LGE |
Silicon Bridge Rectifiers |
|
| 5 | FDB101S |
SeCoS |
1.0 Amp Silicon Bridge Rectifiers |
|
| 6 | FDB102 |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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