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FD1000FV-90 |
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| Part Number | FD1000FV-90 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FV-90 OUTLINE DRAWING Dimensions in mm R4 15° 5 9 `'39 CATHODE φ 60 0.4 MIN q IF(AV)... |
| Features |
n-repetitive One cycle at 60Hz Voltage class 80 4000 4000 3200 90 4500 4500 3600 Ratings 1250 800 20 1.7 × 106 –40 ~ +125 –40 ~ +150 26.5 ~ 43.1 700 Unit V V V Unit A A kA A 2s °C °C kN g Recommended value 39.2 Standard value ELECTRICAL CHARACTERISTICS Symbol IRRM VFM QRR Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Thermal resistance Test conditions Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 2500A, Instantaneous measurement IFM = 800A, diF/dt = –30A/µs, VR = 150V, Tj = 125°C Junction to fin Min — — — — Limits Typ — — — — Max 150 3.0 1500 0.017 U... |
| Document |
 FD1000FV-90 Data Sheet
PDF 50.17KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FD1000FH-56 |
Mitsubishi Electric Semiconductor |
Diode |
|
| 2 | FD1000FX-90 |
Mitsubishi Electric Semiconductor |
Diode |
|
| 3 | FD1000A |
Finechips |
4-COM 51-SEG LCD Display Driver |
|
| 4 | FD1000R17IE4 |
Infineon |
IGBT |
|
| 5 | FD1000R17IE4D_B2 |
Infineon |
IGBT |
|
| 6 | FD1000R33HE3-K |
Infineon |
IGBT-modules |
|
Desde 2024. D4U Semiconductor.
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