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M1MA151KT1 |
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| Part Number | M1MA151KT1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA151KT1/D Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching ap... |
| Features |
Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 to + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA151KT1 M1MA152KT1 Forward Voltage Reverse Breakdown Voltage M1MA151KT1 M1MA152KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Symbol IR Condition VR = 35 V VR = 75 V Min — — — 40 80 Max 0.1 0.1 1.2 — — 2.0 3.0 Unit ... |
| Document |
 M1MA151KT1 Data Sheet
PDF 83.14KB |
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