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M1MA141KT1 |
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| Part Number | M1MA141KT1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA141KT1/D Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applic... |
| Features |
ating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Symbol IR Condition VR = 35 V VR = 75 V Min — — — 40 80 Max 0.1 0.1 1.2 — — 2.0 3.0 ... |
| Document |
 M1MA141KT1 Data Sheet
PDF 95.13KB |
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Desde 2024. D4U Semiconductor.
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