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2SK360 |
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| Part Number | 2SK360 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK360 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source vo... |
| Features |
ID = 10 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz
VGS(off) y fs Ciss Coss Crss PG NF
VDS = 10 V, VGS = 0, f = 100 MHz
1. The 2SK360 is grouped by I DSS as follows.
See characteristic curves of 2SK359.
2
2SK360
Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.65
0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 – 0.1 0.95 0.95 1.9 ± 0.2 2.95 ± 0.2 0.3 + 0.2 1.1 – 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK — Conforms 0.011... |
| Document |
 2SK360 Data Sheet
PDF 24.50KB |
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