2SK3036 |
Part Number | 2SK3036 |
Manufacturer | Panasonic Semiconductor |
Description | Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q ... |
Features |
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
7.3±0.1
1.8±0.1
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
0.75±0.1 2.3±0.1 4.6±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VG... |
Document |
2SK3036 Data Sheet
PDF 23.95KB |
Similar Datasheet
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