2SK2957L |
Part Number | 2SK2957L |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2957(L),2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-567D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High spee... |
Features |
• Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ±20 50 200 50 75 150 –55 to +150 Unit V V A A A W °C ... |
Document |
2SK2957L Data Sheet
PDF 50.80KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2957 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
2 | 2SK2957 |
Renesas |
N-Channel MOSFET | |
3 | 2SK2957L |
Renesas |
N-Channel MOSFET | |
4 | 2SK2957S |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
5 | 2SK2957S |
Renesas |
N-Channel MOSFET | |
6 | 2SK2951 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |