2SK2756-01R |
Part Number | 2SK2756-01R |
Manufacturer | Fuji Electric |
Description | 2SK2756-01R FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 4... |
Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
450V
0,45Ω
18A
80W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperat... |
Document |
2SK2756-01R Data Sheet
PDF 354.18KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2750 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2751 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET | |
3 | 2SK2751 |
UTC |
N-Channel FET | |
4 | 2SK2753 |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK2753-01 |
Fuji Electric |
N-Channel MOSFET | |
6 | 2SK2754-01L |
Fuji Electric |
N-channel MOS-FET |