2SK2724 |
Part Number | 2SK2724 |
Manufacturer | NEC |
Description | This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 10.0 ±0.3 FEATURES • Low On-Res... |
Features |
• Low On-Resistance 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A) • Low Ciss Ciss =1 200 pF Typ. • Built-in G-S Protection Diode • Isolated TO-220 package 15.0 ±0.3 0.7 ±0.1 2.54 1.3 ±0.2 1.5 ±0.2 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) Channel Temperature Storage Temperature * PW ≤ 10 µs, duty ... |
Document |
2SK2724 Data Sheet
PDF 83.89KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2723 |
NEC |
SWITCHING N-CHANNEL POWER MOS FET | |
2 | 2SK2725 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK2725 |
Renesas |
Silicon N-Channel MOSFET | |
4 | 2SK2726 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2726 |
Renesas |
Silicon N-Channel MOSFET | |
6 | 2SK2727 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |