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2SK2514 |
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| Part Number | 2SK2514 |
| Manufacturer | NEC |
| Description | The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate ... |
| Features |
15.7 MAX. 4
3.2±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg 60 ± 20 ± 50 ± 200 150 3.0 150 V V A A W W ˚C
19 MIN. 3.0±0.2
• Low Ciss Ciss = 2 100 pF TYP. • Built-in G-S Protection Diode 20.0±0.2 6.0 1 2 3 2.2±0.2 5.45 MP-88 Drain –55 to +150 ˚C Body Diode Gate Gate Protection Diode Source Document No. D10296... |
| Document |
 2SK2514 Data Sheet
PDF 114.64KB |
Similar Datasheet
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| 1 | 2SK2510 |
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| 2 | 2SK2511 |
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| 3 | 2SK2512 |
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| 4 | 2SK2515 |
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| 5 | 2SK2516-01L |
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| 6 | 2SK2516-01S |
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N-channel MOS-FET |
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Desde 2024. D4U Semiconductor.
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