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2SK2370 |
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| Part Number | 2SK2370 |
| Manufacturer | NEC |
| Description | The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) φ 3.0 ± 0.2 1.0 15.7 MAX 4 4.7 MAX. 1.5 FEATURES • ... |
| Features |
• Low On-Resistance 2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A) 20.0 ± 0.2 • Low Ciss Ciss = 2400 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SAK2369/2370) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 20 ± 80 140 3.0 150 20 285 V V A A W W ˚C A ... |
| Document |
 2SK2370 Data Sheet
PDF 113.33KB |
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