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2SK2130 |
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| Part Number | 2SK2130 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power F-MOS FETs 2SK2130 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 45ns q No secondary brea... |
| Features |
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 45ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
4.1±0.2 8.0±0.2 Solder Dip
13.7 –0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 3.0±0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP... |
| Document |
 2SK2130 Data Sheet
PDF 44.03KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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