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2SK1329 |
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| Part Number | 2SK1329 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1328, 2SK1329 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit... |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1328, 2SK1329 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30... |
| Document |
 2SK1329 Data Sheet
PDF 33.74KB |
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