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2SK1307 |
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| Part Number | 2SK1307 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for mo... |
| Features |
• Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ... |
| Document |
 2SK1307 Data Sheet
PDF 34.25KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1300 |
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| 2 | 2SK1300 |
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| 3 | 2SK1301 |
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| 4 | 2SK1302 |
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| 5 | 2SK1303 |
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| 6 | 2SK1304 |
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