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2SK1299S |
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| Part Number | 2SK1299S |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be drive... |
| Features |
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS I... |
| Document |
 2SK1299S Data Sheet
PDF 48.93KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1299 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
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| 2 | 2SK12996 |
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| 3 | 2SK1299L |
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| 4 | 2SK1290 |
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| 5 | 2SK1292 |
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| 6 | 2SK1293 |
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Desde 2024. D4U Semiconductor.
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